1 January 1986 Application Of Nonlinear Optical Properties And Melt Dynamics Of Crystalline Silicon To Optical Limiting Of 1 Micrometer Picosecond Radiation
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Abstract
We have recently demonstrated a passive, picosecond, Si optical-limiting switch for 1 um radiation. Since this device functions below, at, and above the Si melting threshold, its operating characteristics are determined by a large number of mechanisms including nonlinear transmission, self-diffraction, nonlinear reflection, phase transitions, and resolidification morphologies. Here, we review measurements in which we apply a wide variety of picosecond spectroscopic techniques in order to characterize these optically induced phenomena.
Arthur L. Smirl, Arthur L. Smirl, Thomas F. Boggess, Thomas F. Boggess, Ian W. Boyd, Ian W. Boyd, Steven C. Moss, Steven C. Moss, K. Bohnert, K. Bohnert, Kamjou Mansour, Kamjou Mansour, } "Application Of Nonlinear Optical Properties And Melt Dynamics Of Crystalline Silicon To Optical Limiting Of 1 Micrometer Picosecond Radiation," Optical Engineering 25(1), 251157 (1 January 1986). https://doi.org/10.1117/12.7973794 . Submission:
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