This paper presents an overview of the application of deep-level transient spectroscopy (DLTS) for characterizing and identifying electronic defects in semiconductors. After a review of general principles, the range of defect problems that has been studied by DLTS is illustrated with results from crystalline semiconductors, semiconductor-insulator interfaces, and amorphous semiconductors.
N. M. Johnson,
"Deep-Level Transient Spectroscopy: Characterization And Identification Of Electronic Defects," Optical Engineering 25(5), 255698 (1 May 1986). https://doi.org/10.1117/12.7973888