1 March 1987 256 X 256 Element Platinum Silicide Schottky-Barrier Infrared Charge-Coupled Device Image Sensor
Author Affiliations +
Optical Engineering, 26(3), 263209 (1987). doi:10.1117/12.7974052
A 256 x 256 element PtSi Schottky-barrier 1R-CCD image sensor has been developed using a minimum design rule of 2 µm and a three-level polysilicon structure. The pixel size and chip size are 37 x 31 µm2 and 10 x 10 mm2, respectively. In spite of the small pixel size, a large fill factor of 25% has been obtained. The responsivity has been improved by use of a thin metal film and an optical cavity structure. The barrier height and quantum efficiency coefficient obtained from the array performance measurement are 0.23 eV and 0.15 eV -1, respectively. The noise equivalent temperature difference of about 0.1 K is obtained with f/1.4 optics and a 16.7 ms stare time. The noise in this case is limited by the shot noise of the detector. An infrared camera was also developed using the 256 x 256 element IR-CCD image sensor.
Masafumi Kimata, Masahiko Denda, Naoki Yutani, Shyuhei Iwade, Natsuro Tsubouchi, Michio Daido, Hiroyuki Furukawa, Reikichi Tsunoda, Toshio Kanno, "256 X 256 Element Platinum Silicide Schottky-Barrier Infrared Charge-Coupled Device Image Sensor," Optical Engineering 26(3), 263209 (1 March 1987). https://doi.org/10.1117/12.7974052

Infrared cameras

CCD image sensors

Infrared imaging

Infrared radiation


Image sensors



IR CMOS the digital nightvision solution to sub 1...
Proceedings of SPIE (May 26 2015)
C RED One and C RED 2 SWIR advanced...
Proceedings of SPIE (April 28 2017)
Improved Target Prediction Using An IR Imager
Proceedings of SPIE (September 20 1987)
A novel SWIR detector with an ultra high internal gain...
Proceedings of SPIE (October 08 2007)

Back to Top