1 March 1987 256 X 256 Element Platinum Silicide Schottky-Barrier Infrared Charge-Coupled Device Image Sensor
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Abstract
A 256 x 256 element PtSi Schottky-barrier 1R-CCD image sensor has been developed using a minimum design rule of 2 µm and a three-level polysilicon structure. The pixel size and chip size are 37 x 31 µm2 and 10 x 10 mm2, respectively. In spite of the small pixel size, a large fill factor of 25% has been obtained. The responsivity has been improved by use of a thin metal film and an optical cavity structure. The barrier height and quantum efficiency coefficient obtained from the array performance measurement are 0.23 eV and 0.15 eV -1, respectively. The noise equivalent temperature difference of about 0.1 K is obtained with f/1.4 optics and a 16.7 ms stare time. The noise in this case is limited by the shot noise of the detector. An infrared camera was also developed using the 256 x 256 element IR-CCD image sensor.
Masafumi Kimata, Masahiko Denda, Naoki Yutani, Shyuhei Iwade, Natsuro Tsubouchi, Michio Daido, Hiroyuki Furukawa, Reikichi Tsunoda, Toshio Kanno, "256 X 256 Element Platinum Silicide Schottky-Barrier Infrared Charge-Coupled Device Image Sensor," Optical Engineering 26(3), 263209 (1 March 1987). https://doi.org/10.1117/12.7974052 . Submission:
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