1 March 1987 256 X 256 Element Platinum Silicide Schottky-Barrier Infrared Charge-Coupled Device Image Sensor
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Abstract
A 256 x 256 element PtSi Schottky-barrier 1R-CCD image sensor has been developed using a minimum design rule of 2 µm and a three-level polysilicon structure. The pixel size and chip size are 37 x 31 µm2 and 10 x 10 mm2, respectively. In spite of the small pixel size, a large fill factor of 25% has been obtained. The responsivity has been improved by use of a thin metal film and an optical cavity structure. The barrier height and quantum efficiency coefficient obtained from the array performance measurement are 0.23 eV and 0.15 eV -1, respectively. The noise equivalent temperature difference of about 0.1 K is obtained with f/1.4 optics and a 16.7 ms stare time. The noise in this case is limited by the shot noise of the detector. An infrared camera was also developed using the 256 x 256 element IR-CCD image sensor.
Masafumi Kimata, Masafumi Kimata, Masahiko Denda, Masahiko Denda, Naoki Yutani, Naoki Yutani, Shyuhei Iwade, Shyuhei Iwade, Natsuro Tsubouchi, Natsuro Tsubouchi, Michio Daido, Michio Daido, Hiroyuki Furukawa, Hiroyuki Furukawa, Reikichi Tsunoda, Reikichi Tsunoda, Toshio Kanno, Toshio Kanno, } "256 X 256 Element Platinum Silicide Schottky-Barrier Infrared Charge-Coupled Device Image Sensor," Optical Engineering 26(3), 263209 (1 March 1987). https://doi.org/10.1117/12.7974052 . Submission:
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