1 March 1987 III-V Compound Semiconductor Superlattices For Infrared Photodetector Applications
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This paper reviews recent developments in photodetector technology based on III-V compound superlattices. Of particular interest is the relatively unexplored InAsSb system, in which strained-layer superlattices are required to obtain very small bandgaps (predicted to be as low as 0.1 eV). Progress in the growth of these materials by both molecular beam epitaxy and metal-organic chemical vapor deposition is summarized. Experimental results for a variety of superlattice photodetector structures are presented, along with a discussion of processing technologies that are important for fabricating photodetector arrays.
R. C. Hughes, R. C. Hughes, } "III-V Compound Semiconductor Superlattices For Infrared Photodetector Applications," Optical Engineering 26(3), 263249 (1 March 1987). https://doi.org/10.1117/12.7974058 . Submission:

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