1 April 1987 Excimer Laser Based Lithography: A Deep-Ultraviolet Wafer Stepper For VLSI Processing
Author Affiliations +
Abstract
A deep-ultraviolet step-and-repeat system, operating at 248.4 nm, has been developed by retrofitting a commercial lithography tool with a KrF excimer laser and custom designed, fused silica condenser and projection optics. It is a reduction system with a field size of 14.5 mm and a variable numerical aperture of 0.20 to 0.38. Resolution of 0.5 µm features over the full field is obtained with routine use, and 0.35 µm resolution is attainable under more limited conditions. This paper describes the development and testing of the system, including recent modifications, and discusses some of the technical issues associated with short wavelength excimer laser based lithography.
Victor Pol, James H. Bennewitz, Tanya E. Jewell, Darryl W. Peters, "Excimer Laser Based Lithography: A Deep-Ultraviolet Wafer Stepper For VLSI Processing," Optical Engineering 26(4), 264311 (1 April 1987). https://doi.org/10.1117/12.7974072 . Submission:
JOURNAL ARTICLE
8 PAGES


SHARE
RELATED CONTENT

Present status of excimer laser exposure apparatus
Proceedings of SPIE (November 06 2000)
Excimer Laser Stepper for Sub-half Micron Lithography
Proceedings of SPIE (July 25 1989)
High-resolution contact lithography by excimer lasers
Proceedings of SPIE (November 06 2000)
Deep UV Lithography: Problems And Potential
Proceedings of SPIE (September 01 1987)
New dimensions of micromachining with 157-nm laser light
Proceedings of SPIE (September 03 1999)

Back to Top