This paper reviews the impact of advances in photoresists and processing on submicrometer imaging using optical lithography. Among the topics discussed for the extension of single-layer resists into the submicrometer regime are the use of dyes, the development of materials for the deep-UV region, image reversal, and contrast-enhancement layers. Approaches to dealing with substrate topographical effects, such as multilayer resists and antireflection coatings, are reviewed. Future directions to extend optical lithography further and address current problems are discussed.
W. R. Brunsvold,
D. M. Crockatt,
G. J. Hefferon,
C. F. Lyons,
"Resist Technology For Submicrometer Optical Lithography," Optical Engineering 26(4), 264330 (1 April 1987). https://doi.org/10.1117/12.7974075