1 April 1987 Resist Technology For Submicrometer Optical Lithography
Author Affiliations +
Abstract
This paper reviews the impact of advances in photoresists and processing on submicrometer imaging using optical lithography. Among the topics discussed for the extension of single-layer resists into the submicrometer regime are the use of dyes, the development of materials for the deep-UV region, image reversal, and contrast-enhancement layers. Approaches to dealing with substrate topographical effects, such as multilayer resists and antireflection coatings, are reviewed. Future directions to extend optical lithography further and address current problems are discussed.
W. R. Brunsvold, W. R. Brunsvold, D. M. Crockatt, D. M. Crockatt, G. J. Hefferon, G. J. Hefferon, C. F. Lyons, C. F. Lyons, } "Resist Technology For Submicrometer Optical Lithography," Optical Engineering 26(4), 264330 (1 April 1987). https://doi.org/10.1117/12.7974075 . Submission:
JOURNAL ARTICLE
7 PAGES


SHARE
RELATED CONTENT

Positive tone oxide nanoparticle EUV (ONE) photoresists
Proceedings of SPIE (March 20 2016)
Pellicle transmission uniformity requirements
Proceedings of SPIE (December 17 1998)
A Review Of Contrast In Positive Photoresists
Proceedings of SPIE (April 17 1985)
Characterization Of A UV Resist for 248 nm Lithography
Proceedings of SPIE (January 29 1989)

Back to Top