Selenium films obtained by vacuum deposition and hot-wall epitaxy (HWE) were investigated for structural, morphological, and holographic characteristics. Vacuum-deposited Se films, which are generally amorphous, were found to crystallize under an intense beam of an electron microscope. The transmission electron diffraction results indicated that the crystallized phase was b-monoclinic. These films have high transmittance in the visible spectrum and exhibit good exposure characteristics for recording holograms. Parameters such as diffraction efficiency, modulation transfer function, and spatial frequency, determining the exposure characteristics, were evaluated. Films grown by hot-wall epitaxy, however, have altogether different properties. The surface morphology showed growth to needlelike single crystals 5 kall in size, with preferred growth in the (100) direction. These films were gray and exhibited poor transmittance and scattering centers, thus losing their recording properties. X-ray diffraction results of Se films grown by HWE indicated that the crystallized phase was hexagonal in structure.