1 September 1987 Short Wavelength Responsivity Improvement And Long Wavelength Responsivity Degradation In Photodiodes As A Result Of Gamma Irradiation
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Abstract
Changes in surface and bulk properties of United Detector Technology pin-05D photodiodes as a result of 1.3 Mrad gamma irradiation are compared. As suspected by previous investigators but not verified until now, changes in surface properties are seen experimentally to significantly alter overall device characteristics. Changes in device properties include increases in surface conductivity, improved quantum efficiency at visible wavelengths, decreased dark current at very low reverse bias, decreased diode ideality factor, decreased infrared response, and decreased minority carrier lifetime. The first four results are new and permit differentiation between surface and bulk effects. A model consistent with all of these measurements is presented to explain the changes. The model is based upon gamma ray photodesorption of surface impurities.
S. Hava, S. Hava, N. S. Kopeika, N. S. Kopeika, } "Short Wavelength Responsivity Improvement And Long Wavelength Responsivity Degradation In Photodiodes As A Result Of Gamma Irradiation," Optical Engineering 26(9), 269959 (1 September 1987). https://doi.org/10.1117/12.7974178 . Submission:
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