1 May 1988 Multiple Quantum Well Spatial Light Modulators For Optical Processing Applications
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Optical Engineering, 27(5), 275372 (1988). doi:10.1117/12.7976686
In this paper recent theoretical and experimental work in the area of multiple quantum well (MQW) modulators for optical processing applications is presented. The theoretical work includes the application of the effective mass approximation to compositional MQW structures and the use of a two-band tight-binding approximation to doping-modulated nipi structures. The theoretical calculations are used to obtain electric-field-dependent absorption and refractive index in the above MQW structures. The experimental results of a 4µm thick GaAs/GaAIAs MQW modulator show an ~ 10:1 on/off ratio with an applied voltage of ~ 20 V (absorption change ~ 6000 cm-1 at E ~ 50 kV/cm) and ~0.4 rad of phase shift with an applied voltage of 10 V (~0.04 at E ~25 kV/cm). Such high electro-optical modulations have previously been reported only in the MQW optical waveguide modulator. Concepts of photoactivated, electrically addressed MQW spatial light modulators and IR-to-visible MQW spatial light modulators are presented. Finally, theoretical evaluation of quantum dot arrays and their potential use in spatial light modulators are discussed.
T. Y. Hsu, Uzi Efron, W. Y. Wu, J. N. Schulman, I. J. D'Haenens, Yia-Chung Chang, "Multiple Quantum Well Spatial Light Modulators For Optical Processing Applications," Optical Engineering 27(5), 275372 (1 May 1988). http://dx.doi.org/10.1117/12.7976686

Optical signal processing

Quantum wells



Electro optics


Optically addressed spatial light modulators

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