1 October 1989 Time-Resolved Raman Scattering In Group III-V And Group IV Semiconductors
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Optical Engineering, 28(10), 281075 (1989). doi:10.1117/12.7977091
Abstract
Some applications of picosecond, time-resolved Raman scattering in the field of nonequilibrium semiconductor physics are reviewed. A brief, nonexhaustive survey of progress in this field over the past 10 years serves to introduce the general experimental techniques and to indicate the range of physical phenomena that have been studied. More detailed coverage of work on nonequilibrium coupled plasmon-LO phonon modes in InP and GaAs and of optical phonon dynamics in Ge and GeSi alloys is given. Emphasis is placed on comparing the use of picosecond Raman scattering to study nonequilibrium phenomena in group IV and group III-V semiconductors.
Jeff F. Young, "Time-Resolved Raman Scattering In Group III-V And Group IV Semiconductors," Optical Engineering 28(10), 281075 (1 October 1989). https://doi.org/10.1117/12.7977091
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