1 October 1989 Ultrafast Electronic And Structural Processes In Highly Excited Crystalline And Noncrystalline Silicon
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Abstract
The carrier dynamics of highly excited (N > 1020 cm-3) crystal-line and amorphous silicon have been studied by picosecond and femto-second pump and probe measurements. The Auger coefficient, trapping time, and other parameters relevant for transport have been obtained. At still higher excitation, melting occurs. The optical constants of liquid Si have been measured, and evidence for superheating of the liquid phase above the boiling temperature is presented.
P. M. Fauchet, P. M. Fauchet, } "Ultrafast Electronic And Structural Processes In Highly Excited Crystalline And Noncrystalline Silicon," Optical Engineering 28(10), 281096 (1 October 1989). https://doi.org/10.1117/12.7977093 . Submission:
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