Picosecond Photoluminescence Spectroscopy In Highly Excited Semiconductors

S. Charbonneau

doi:10.1117/12.7977094

1 October 1989 Picosecond Photoluminescence Spectroscopy In Highly Excited Semiconductors

S. Charbonneau

Author Affiliations +

Optical Engineering, Vol. 28, Issue 10, 281101 (October 1989). https://doi.org/10.1117/12.7977094

Abstract

Time-resolved photoluminescence is universally regarded as a very useful probe in the investigation of the dynamic behavior of high density electron-hole systems in direct-gap semiconductors, in which carrier lifetimes are of the order of nanoseconds or less. Two applications of this technique include (1) the observation of excitons in which a conduction electron and a valence hole are bound to one another via the long-range Coulomb interaction and (2) the formation of excitonic molecules (or biexcitons), which is caused by the attractive covalent bonding between two single excitons. This paper reviews transient photoluminescence techniques used recently in the study of such highly excited systems. Interaction between excitons at high concentration is discussed, and some experimental results for ZnSe and GaAs are presented.

Citation Download Citation

S. Charbonneau "Picosecond Photoluminescence Spectroscopy In Highly Excited Semiconductors," Optical Engineering 28(10), 281101 (1 October 1989). https://doi.org/10.1117/12.7977094

Published: 1 October 1989

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