Contribution of the graded region of a HgCdTe diode to its saturation current

Samuel E. Schacham; Elieser Finkman

doi:10.1117/12.55652

Abstract

Experimental results show that the contribution of the graded n region to the current of Hg1 _xCdx Te diodes is not negligible, as compared to that of the p type bulk. The theoretical analysis reveals the influence of the electric field present outside the depletion region on the current generated by the graded region. This field not only produces a drift component, which drives the minority carriers into the junction; it also greatly modifies the excess carrier distribution, thereby changing the diffusion part of the current. The analysis shows the importance of the lifetime profile in the graded region, which is a function of the specific recombination mechanism and its dependence on the local dopant concentration. The effect of parameters such as substrate concentration, surface concentration, and junction depth on this current is discussed.

Citation Download Citation

Samuel E. Schacham, Samuel E. Schacham, Elieser Finkman, Elieser Finkman, } "Contribution of the graded region of a HgCdTe diode to its saturation current," Optical Engineering 29(7), (1 July 1990). https://doi.org/10.1117/12.55652 . Submission:

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $20.00

Non-members: $25.00 ADD TO CART

Keywords/Phrases

Search In:

Publication Years