1 November 1991 Infrared image sensors
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Abstract
Second-generation infrared image sensors are becoming available in a variety of infrared detector materials, including photovoltaic HgCdTe, PtSi, and lnSb and photoconductive extrinsic silicon, PbS, and PbSe. We review the background of the evolution of infrared detector materials and summarize the formats and configurations available now in prototype production. Capsule data summaries are provided to assist the reader in understanding the operating range of spectral response, temperature, and other performance parameters such as uniformity for each detector material type.
Paul R. Norton "Infrared image sensors," Optical Engineering 30(11), (1 November 1991). https://doi.org/10.1117/12.56001
Published: 1 November 1991
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CITATIONS
Cited by 139 scholarly publications and 9 patents.
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KEYWORDS
Sensors

Mercury cadmium telluride

Silicon

Quantum efficiency

Infrared sensors

Lead

Imaging systems

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