1 May 1991 Single-beam and multiple-beam optical limiters using semiconductors
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Optical Engineering, 30(5), (1991). doi:10.1117/12.55847
Abstract
We report our investigations of single- and multiple-beam optical limiter configurations using GaAs and Si as the nonlinear optical materials. Three distinct multiple-beam geometries are discussed. One of these, in which two beams interfere within the semiconductor to produce a grating, takes advantage oftransient energy transfer and photorefractive beam coupling to deplete the signal beam. The other two configurations exploit the whole-beam absorptive and refractive index changes induced in the semiconductor by a strong control beam that arrives at the sample before the signal. For one of the latter two configurations, nonlinear absorption and induced defocusing are used to attenuate the signal; in the other, nonlinear absorption and induced deflection are used. We discuss the relative merits of each configuration and compare them to singlebeam results obtained under identical experimental conditions.
Thomas F. Boggess, Arthur L. Smirl, Jimmy Dubard, A. G. Cui, Rod Skinner, "Single-beam and multiple-beam optical limiters using semiconductors," Optical Engineering 30(5), (1 May 1991). http://dx.doi.org/10.1117/12.55847
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KEYWORDS
Absorption

Gallium arsenide

Silicon

Nonlinear optics

Energy transfer

Semiconductors

Beam controllers

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