1 January 1992 Transient thermal stress analysis of interacting surface defects by digital photoelasticity
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Abstract
The digital photoelastic technique was used to obtain an experimental solution of the transient thermal stresses of two interacting semielliptic surface defects due to a step temperature change at the free surface. A series of computer programs were developed on the digital photoelastic system to extract the maximum transient thermal stress on the defect boundary. By using a statistical analysis package, the variation of the maximum transient thermal stresses and their locations were correlated with the time, temperature difference, and geometrical parameters of the defects.
Wei-Chung Wang, Tsai-Lin Chen, "Transient thermal stress analysis of interacting surface defects by digital photoelasticity," Optical Engineering 31(1), (1 January 1992). https://doi.org/10.1117/12.56044
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