1 April 1992 Optical sensors
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Optical Engineering, 31(4), (1992). doi:10.1117/12.56113
Abstract
Experimental and theoretical results are presented of photosensitive semiconductor structures as well as the main developments of modern semiconductor photoresistors, photodiodes, including injection ones, based on polycrystalline and monocrystalline materials, multilayer structures and superlattices for the visual-far infrared spectral range. Performance of multielement photodetectors based on lead chalcogenides, germanium and silicon, AIIIBV compounds, and CMT structures is described.
Vladimir T. Khryapov, Vladimir P. Ponomarenko, V. G. Butkevitch, Igor I. Taubkin, Vitaly I. Stafeev, Sergey A. Popov, Vladimir V. Osipov, "Optical sensors," Optical Engineering 31(4), (1 April 1992). http://dx.doi.org/10.1117/12.56113
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KEYWORDS
Photodetectors

Photodiodes

Lead

Photoresistors

Silicon

Chemical elements

Germanium

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