1 July 1992 Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators
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Optical Engineering, 31(7), (1992). doi:10.1117/12.57683
Abstract
Device approaches are investigated for optically addressed SLMs based on molecular beam epitaxy (MBE) engineered III-V materials and structures. Strong photo-optic effects can be achieved in periodically δ-doped multiple quantum well structures, but are still insufficientfor high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. We use the asymmetric Fabry-Perot cavity approach that permits extinction of light due to interference of light reflected from the front and back surfaces of the cavity. Optically controlled modulation of the absorption in the active cavity layers unbalances the cavity and "turns on" the reflected output signal, thereby allowing large contrast ratios. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror (≈ 0.98) and the GaAs surface as the low reflectance mirror (≈ 0.3). We use for our active cavity InGaAs/GaAs multiple quantum wells separated by periodically δ-doped GaAs barriers to achieve a sensitive photo-optic effect due to exciton quenching. High-contrast modulation (> 60:1) is achieved using a low-power (< 100 mW/cm2) InGaAs/GaAs quantum well laser for the control signal.
Anders G. Larsson, Joseph L. Maserjian, "Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators," Optical Engineering 31(7), (1 July 1992). http://dx.doi.org/10.1117/12.57683
JOURNAL ARTICLE
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KEYWORDS
Quantum wells

Absorption

Reflectivity

Gallium arsenide

Modulation

Electrons

Fabry–Perot interferometers

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