1 August 1992 Dimensional metrology for partially etched photomasks in iterative-etch fabrication processes
Author Affiliations +
Abstract
A method for measuring the dimensions of patterned metal features on a lithographic photomask during iterative-etch processing has been developed. Features are inspected using reflected light from the unpatterned side of the mask; a specially corrected 0.55-NA objective lens provides diffraction limited resolution at 488-nm wavelength for mask thicknesses up to 5 mm. The method provides more accurate process control than conventional transmitted or reflected light metrology: Experimental data show nearly three times smaller measurement error due to the presence of resist overhanging the metal edges. The method may also have benefit for process control in the manufacture of certain types of rim-shifting phase-shift photomasks.
Ian Smith, "Dimensional metrology for partially etched photomasks in iterative-etch fabrication processes," Optical Engineering 31(8), (1 August 1992). https://doi.org/10.1117/12.58724 . Submission:
JOURNAL ARTICLE
3 PAGES


SHARE
RELATED CONTENT

Production challenges of making EUV mask blanks
Proceedings of SPIE (June 16 2005)
Advances in optical metrology for the 1990s
Proceedings of SPIE (June 01 1990)
Accuracy of Spatial Metrology
Proceedings of SPIE (July 19 1989)
Low Voltage Sem Metrology For Pilot Line Applications
Proceedings of SPIE (April 17 1987)
Metrology issues associated with submicron linewidths
Proceedings of SPIE (July 01 1991)
Optical Measurement Of Contacts
Proceedings of SPIE (July 19 1989)

Back to Top