1 October 1993 Acid-catalyzed single-layer resists for ArF lithography
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Optical Engineering, 32(10), (1993). doi:10.1117/12.145955
Abstract
A positive-tone single-layer resist for use with 193-nm radiation has been developed. The system contains a terpolymer of methyl methacrylate, methacrylic acid, and t-butyl methacrylate, along with a photoacid generator. The chemically amplified deprotection of the t-butyl methacrylate into methacrylic acid increases the polarity of the resist and allows selective dissolution in metal-ion-free aqueous-base solutions. The resist sensitivity is less than 10 mJ/cm2, and its inherent resolution is better than 0.1 μm. These acrylate-based systems have the potential to be both lower in cost and have better environmental stability than the deep ultraviolet chemically amplified resists that use phenolic resins.
Roderick R. Kunz, Robert D. Allen, William D. Hinsberg, Gregory M. Wallraff, "Acid-catalyzed single-layer resists for ArF lithography," Optical Engineering 32(10), (1 October 1993). http://dx.doi.org/10.1117/12.145955
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KEYWORDS
Lithography

Deep ultraviolet

Absorption

Prototyping

Absorbance

Chemically amplified resists

Laser development

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