1 October 1993 Chemical amplification positive deep ultraviolet resist by means of partially tetrahydropyranyl-protected polyvinylphenol
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Optical Engineering, 32(10), (1993). doi:10.1117/12.145971
Abstract
Chemical amplification positive resists using tetrahydropyranyl-protected polyvinylphenol (THP-M) are investigated for deep-UV lithography. Infrared spectroscopy meansurements show that THP-M in the resist film cannot be completely deprotected by photogenerated acid. This causes a poor developability of the resist containing highly tetrahydropyranyl (THP) protected polyvinylphenol in an aqueous base developer. To improve the developability in the pure aqueous base developer, we use partially THP-protected polyvinylphenol. To determine the optimum protection degree, we examine the relation between the dissolution rate of THP-M films and THP-protection degree in developers. A resist formulated from 20% THP-protected polyvinylphenol and bis(tert-butylphenyl)iodonium triflate resolved 0.30-μm line-and-space patterns with the aqueous base development using a KrF excimer laser stepper with a dose of 46 mJ/cm2. Postexposure delay effects of this resist system are also studied. The deprotection reaction of THP-M for lower dose during the holding time at room temperature and incomplete deprotection reaction for higher dose are found to deteriorate the exposure characteristics.
Takashi Hattori, Leo Schlegel, Akira Imai, Nobuaki Hayashi, Takumi Ueno, "Chemical amplification positive deep ultraviolet resist by means of partially tetrahydropyranyl-protected polyvinylphenol," Optical Engineering 32(10), (1 October 1993). http://dx.doi.org/10.1117/12.145971
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KEYWORDS
Deep ultraviolet

Chlorine

Infrared spectroscopy

Lithography

Absorbance

Absorption

Excimer lasers

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