1 October 1993 Comparison of etching tools for resist pattern transfer
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Optical Engineering, 32(10), (1993). doi:10.1117/12.146847
Abstract
Several etching tools are evaluated for the oxygen-based plasma pattern transfer step in surface imaging and multilayer resist processes. These tools include a conventional parallel-plate reactive ion etcher, a magnetically enhanced reactive ion etcher, an electron cyclotron resonance reactor, and an rf helical resonator (Helicon) reactor. The performance of each tool is examined with respect to etch rate, etch profile, selectivity between the imaging layer and the pattern transfer layer, etch uniformity, etching residue, linewidth uniformity, and process latitude.
Mark W. Horn, Mark A. Hartney, Roderick R. Kunz, "Comparison of etching tools for resist pattern transfer," Optical Engineering 32(10), (1 October 1993). http://dx.doi.org/10.1117/12.146847
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KEYWORDS
Etching

Reactive ion etching

Semiconducting wafers

Silicon

Ions

Photoresist processing

Microwave radiation

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