1 October 1993 Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography
Author Affiliations +
Abstract
Liquid- and vapor-phase silylation processes are compared for a 193-nm positive-tone lithographic process using polyvinylphenol as a resist. The liquid-phase process, using a mixture of xylene, hexamethylcyclotrisilazane, and propylene glycol methyl ether acetate, was found to have higher silylation contrast, better sensitivity, and a smaller proximity effect (a decrease in silylation depth for smaller feature sizes). These factors result in a larger exposure latitude, particularly at feature sizes below 0.5 μm. These advantages are greatly offset, however, by the increased chemical costs, which are estimated to be more than 100 times greater than for the vapor-phase process.
Mark A. Hartney, Mark A. Hartney, Roderick R. Kunz, Roderick R. Kunz, Lynn M. Eriksen, Lynn M. Eriksen, Douglas C. LaTulipe, Douglas C. LaTulipe, } "Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography," Optical Engineering 32(10), (1 October 1993). https://doi.org/10.1117/12.146843 . Submission:
JOURNAL ARTICLE
6 PAGES


SHARE
RELATED CONTENT

NIL defect performance toward high volume mass production
Proceedings of SPIE (March 21 2016)
Evaluation of liquid silylated resists for 213-nm exposure
Proceedings of SPIE (September 14 1993)
Soft bake effect in 193-nm chemically amplified resist
Proceedings of SPIE (June 22 2000)
Sub-100nm pattern fabrication in e-beam lithography
Proceedings of SPIE (June 29 1986)

Back to Top