1 March 1993 Electrical properties of p-type HgCdTe/ZnS interfaces
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Optical Engineering, 32(3), (1993). doi:10.1117/12.61042
Abstract
A study is made of p-type HgCdTe surface passivation with ZnS. Measurements of capacitance-voltage characteristics for metal insulator semiconductor (MIS) devices show that the interface electrical properties strongly depend on the surface preparation. Under some appropriate surface pretreatment, the fixed interface charge density can be lowered to near -1 x 1011 cm-2, and the slow trap density can be less than 1 x 1011 cm-2, but the interface trap density is still as high as 1012 cm-2 eV-1. Experimental results are discussed.
Henry X. Yuan, Fei Ming Tong, Dingyuan Tang, "Electrical properties of p-type HgCdTe/ZnS interfaces," Optical Engineering 32(3), (1 March 1993). http://dx.doi.org/10.1117/12.61042
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KEYWORDS
Interfaces

Zinc

Mercury cadmium telluride

Dielectrics

Photodiodes

Surface finishing

Metals

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