1 March 1993 Metal-oxide thin films with reduced residual absorption deposited in a reactive low-voltage ion-plating process with N2 activation
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Optical Engineering, 32(3), (1993). doi:10.1117/12.60847
Abstract
Mechanisms have been investigated for increasing the abundance of atomic oxygen in the process environment during reactive low-voltage ion plating, a plasma-assisted evaporation process. Feeding several percent of nitrogen into the coating chamber led to enhanced oxidation and consequential reduction of residual optical absorption of ion-plated oxide films of tantala.
Sohrab Zarrabian, Austin Grogan, X. Q. Hu, C. Lee, Karl H. Guenther, "Metal-oxide thin films with reduced residual absorption deposited in a reactive low-voltage ion-plating process with N2 activation," Optical Engineering 32(3), (1 March 1993). http://dx.doi.org/10.1117/12.60847
JOURNAL ARTICLE
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KEYWORDS
Oxygen

Nitrogen

Absorption

Tantalum

Oxidation

Thin films

Oxides

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