1 March 1993 Metal-oxide thin films with reduced residual absorption deposited in a reactive low-voltage ion-plating process with N2 activation
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Abstract
Mechanisms have been investigated for increasing the abundance of atomic oxygen in the process environment during reactive low-voltage ion plating, a plasma-assisted evaporation process. Feeding several percent of nitrogen into the coating chamber led to enhanced oxidation and consequential reduction of residual optical absorption of ion-plated oxide films of tantala.
Sohrab Zarrabian, Sohrab Zarrabian, Austin Grogan, Austin Grogan, X. Q. Hu, X. Q. Hu, C. Lee, C. Lee, Karl H. Guenther, Karl H. Guenther, } "Metal-oxide thin films with reduced residual absorption deposited in a reactive low-voltage ion-plating process with N2 activation," Optical Engineering 32(3), (1 March 1993). https://doi.org/10.1117/12.60847 . Submission:
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