1 April 1993 Enhanced optical effect in a high electron mobility transistor device
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Optical Engineering, 32(4), (1993). doi:10.1117/12.61285
Abstract
When radiation is allowed to fall on the spacing between the source and gate and the gate and drain of a AlGaAs/GaAs high electron mobility transfer device, a photovoltage develops across the heterojunction. This significantly enhances the device characteristics.
B. B. Pal, H. Mitra, "Enhanced optical effect in a high electron mobility transistor device," Optical Engineering 32(4), (1 April 1993). http://dx.doi.org/10.1117/12.61285
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KEYWORDS
Field effect transistors

Heterojunctions

Transistors

Gallium arsenide

Radiation effects

Optoelectronic devices

Optoelectronics

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