1 April 1993 Enhanced optical effect in a high electron mobility transistor device
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Abstract
When radiation is allowed to fall on the spacing between the source and gate and the gate and drain of a AlGaAs/GaAs high electron mobility transfer device, a photovoltage develops across the heterojunction. This significantly enhances the device characteristics.
B. B. Pal, B. B. Pal, H. Mitra, H. Mitra, } "Enhanced optical effect in a high electron mobility transistor device," Optical Engineering 32(4), (1 April 1993). https://doi.org/10.1117/12.61285 . Submission:
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