1 September 1993 Vanadium oxide films for optical switching and detection
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Optical Engineering, 32(9), (1993). doi:10.1117/12.143951
Abstract
Structural, electrical, and optical properties of the polycrystalline films of VO2, V2O5, and mixtures of these two oxides are presented. Resistivity change by a factor larger than 103 accompanying the semiconductor-metal phase transition in the VO2 films is reported. A significant contrast in optical transmittance for the two phases of VO2 is observed. High temperature resistivity and optical transmittance of the V2O5 films are shown. Values of the temperature coefficient of resistance in some of the VO2 films in their semiconducting phase and in some of the V2O5 films are as high as 5.2 and 4% per degree Celsius, respectively. Phase switching properties of the VO2-V2O5 films are described. Applications of the fabricated films include optical switches and bobmetric-type light detectors.
Hubert Jerominek, Francis Picard, Denis Vincent, "Vanadium oxide films for optical switching and detection," Optical Engineering 32(9), (1 September 1993). http://dx.doi.org/10.1117/12.143951
JOURNAL ARTICLE
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KEYWORDS
Transmittance

Vanadium

Semiconductors

Oxides

Optical switching

Optical properties

Resistance

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