Vanadium oxide films for optical switching and detection

Hubert Jerominek; Francis Picard; Denis Vincent

doi:10.1117/12.143951

1 September 1993 Vanadium oxide films for optical switching and detection

Hubert Jerominek, Francis Picard, Denis Vincent

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Optical Engineering, Vol. 32, Issue 9, (September 1993). https://doi.org/10.1117/12.143951

Abstract

Structural, electrical, and optical properties of the polycrystalline films of VO₂, V₂O₅, and mixtures of these two oxides are presented. Resistivity change by a factor larger than 10³ accompanying the semiconductor-metal phase transition in the VO₂ films is reported. A significant contrast in optical transmittance for the two phases of VO₂ is observed. High temperature resistivity and optical transmittance of the V₂O₅ films are shown. Values of the temperature coefficient of resistance in some of the VO₂ films in their semiconducting phase and in some of the V₂O₅ films are as high as 5.2 and 4% per degree Celsius, respectively. Phase switching properties of the VO₂-V₂O₅ films are described. Applications of the fabricated films include optical switches and bobmetric-type light detectors.

Citation Download Citation

Hubert Jerominek, Francis Picard, and Denis Vincent "Vanadium oxide films for optical switching and detection," Optical Engineering 32(9), (1 September 1993). https://doi.org/10.1117/12.143951

Published: 1 September 1993

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