1 January 1994 Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays
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Optical Engineering, 33(1), (1994). doi:10.1117/12.151535
Abstract
Heterojunction GexSi1-x/Si internal-photoemission infrared detectors are being developed for multispectral imaging in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral bands. The detectors, which are fabricated by molecular beam epitaxy of degenerately doped GexSi1-x heteroepitaxial layers on Si, exhibit high responsivity uniformity, low dark-current noise, tunable cutoff wavelength out to 25 μm, and excellent producibility. High-quality MWIR and LWIR thermal imagery has been obtained for 320-x 244- and 400- x 400-element focal plane arrays consisting of GexSi1-x/Si detectors with cutoff wavelength of ~10 μm and monolithic CCD readout circuitry.
Bor-Yeu Tsaur, Chenson K. Chen, Susanne A. Paul, "Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays," Optical Engineering 33(1), (1 January 1994). http://dx.doi.org/10.1117/12.151535
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KEYWORDS
Sensors

Silicon

Staring arrays

Heterojunctions

Long wavelength infrared

Microlens array

Mid-IR

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