1 January 1994 Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays
Author Affiliations +
Optical Engineering, 33(1), (1994). doi:10.1117/12.151535
Abstract
Heterojunction GexSi1-x/Si internal-photoemission infrared detectors are being developed for multispectral imaging in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral bands. The detectors, which are fabricated by molecular beam epitaxy of degenerately doped GexSi1-x heteroepitaxial layers on Si, exhibit high responsivity uniformity, low dark-current noise, tunable cutoff wavelength out to 25 μm, and excellent producibility. High-quality MWIR and LWIR thermal imagery has been obtained for 320-x 244- and 400- x 400-element focal plane arrays consisting of GexSi1-x/Si detectors with cutoff wavelength of ~10 μm and monolithic CCD readout circuitry.
Bor-Yeu Tsaur, Chenson K. Chen, Susanne A. Paul, "Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays," Optical Engineering 33(1), (1 January 1994). https://doi.org/10.1117/12.151535
JOURNAL ARTICLE
7 PAGES


SHARE
RELATED CONTENT

Status of two color and large format HgCdTe FPA technology...
Proceedings of SPIE (February 28 2006)
Silicon infrared focal plane arrays
Proceedings of SPIE (June 12 2001)
Results from the UK 3rd generation programme: Albion
Proceedings of SPIE (October 02 2008)
HgCdTe on Si for hybrid and monolithic FPAs
Proceedings of SPIE (September 01 1990)
MBE-grown HgCdTe heterojunction structures for IR FPAs
Proceedings of SPIE (April 12 1996)

Back to Top