1 January 1994 Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays
Author Affiliations +
Heterojunction GexSi1-x/Si internal-photoemission infrared detectors are being developed for multispectral imaging in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral bands. The detectors, which are fabricated by molecular beam epitaxy of degenerately doped GexSi1-x heteroepitaxial layers on Si, exhibit high responsivity uniformity, low dark-current noise, tunable cutoff wavelength out to 25 μm, and excellent producibility. High-quality MWIR and LWIR thermal imagery has been obtained for 320-x 244- and 400- x 400-element focal plane arrays consisting of GexSi1-x/Si detectors with cutoff wavelength of ~10 μm and monolithic CCD readout circuitry.
Bor-Yeu Tsaur, Bor-Yeu Tsaur, Chenson K. Chen, Chenson K. Chen, Susanne A. Paul, Susanne A. Paul, } "Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays," Optical Engineering 33(1), (1 January 1994). https://doi.org/10.1117/12.151535 . Submission:


Next decade in infrared detectors
Proceedings of SPIE (October 08 2017)
High Density Schottky-Barrier Infrared Image Sensor
Proceedings of SPIE (August 14 1988)
Silicon infrared focal plane arrays
Proceedings of SPIE (June 11 2001)
Results from the UK 3rd generation programme: Albion
Proceedings of SPIE (October 01 2008)
High-operating-temperature infrared detectors based on HDVIP
Proceedings of SPIE (October 20 2004)
MBE-grown HgCdTe heterojunction structures for IR FPAs
Proceedings of SPIE (April 11 1996)

Back to Top