1 November 1994 Liquid-crystal 1.8-in. displays using poly-Si thin-film transistors with novel structure and a storage-capacitance arrangement
Author Affiliations +
Abstract
We have fabricated 1.8-in., 86,400-pixel poly-Si thin-film-transistor (TFT) LCDs with a novel TFT structure and a storage-capacitance (Cst) arrangement. The TFTs have a self-aligned offset structure that is made by a simple process without using an additional mask. With this structure, we have reduced the OFF current, and hence attained a high ON/OFF current ratio of 107. A novel Cst line arrangement called "modified on Cst gate" was adopted. Gate lines and Cst lines are arranged alternately, and the (n - 1)'th Cst line is connected to the n'th gate line at the line's end. The Cst line works as backup for the gate line. Consequently, we have obtained TFT arrays with no line defects (240 gate lines). By using these techniques, we have succeeded in fabricating a high-performance 1.8-in. poly-Si TFT-LCD panel for a projection TV.
Takashi Sugawara, Kazuhiro Kobayashi, Hiroyuki Murai, Christiaan Baert, Takao Sakamoto, Hidetada Tokioka, Yuichi Masutani, Hirofumi Namizaki, Masahiro Nunoshita, "Liquid-crystal 1.8-in. displays using poly-Si thin-film transistors with novel structure and a storage-capacitance arrangement," Optical Engineering 33(11), (1 November 1994). https://doi.org/10.1117/12.181150 . Submission:
JOURNAL ARTICLE
7 PAGES


SHARE
Back to Top