Probing semiconductor interfaces using nonlinear optical spectroscopy

John F. McGilp; Mark Cavanagh; John R. Power; J. Des O'Mahony

doi:10.1117/12.186373

1 December 1994 Probing semiconductor interfaces using nonlinear optical spectroscopy

John F. McGilp, Mark Cavanagh, John R. Power, J. Des O'Mahony

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Optical Engineering, Vol. 33, Issue 12, (December 1994). https://doi.org/10.1117/12.186373

Abstract

The nonlinear optical response of semiconductor interfaces using three-wave mixing experiments in general, and second harmonic generation (SHG) in particular, has been widely studied, but it is only recently, with the advent of commercial tunable pulsed laser sources, that the spectroscopic aspect of SHG can be more readily exploited. Results from porous Si and Si(100)-Sb are reported that illustrate the potential of spectroscopic SHG as a probe of semiconductor interfaces.

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John F. McGilp, Mark Cavanagh, John R. Power, and J. Des O'Mahony "Probing semiconductor interfaces using nonlinear optical spectroscopy," Optical Engineering 33(12), (1 December 1994). https://doi.org/10.1117/12.186373

Published: 1 December 1994

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