1 December 1994 Probing semiconductor interfaces using nonlinear optical spectroscopy
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Optical Engineering, 33(12), (1994). doi:10.1117/12.186373
Abstract
The nonlinear optical response of semiconductor interfaces using three-wave mixing experiments in general, and second harmonic generation (SHG) in particular, has been widely studied, but it is only recently, with the advent of commercial tunable pulsed laser sources, that the spectroscopic aspect of SHG can be more readily exploited. Results from porous Si and Si(100)-Sb are reported that illustrate the potential of spectroscopic SHG as a probe of semiconductor interfaces.
John F. McGilp, Mark Cavanagh, John R. Power, J. Des O'Mahony, "Probing semiconductor interfaces using nonlinear optical spectroscopy," Optical Engineering 33(12), (1 December 1994). http://dx.doi.org/10.1117/12.186373
JOURNAL ARTICLE
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KEYWORDS
Interfaces

Second-harmonic generation

Silicon

Spectroscopy

Picosecond phenomena

Semiconductors

Antimony

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