1 March 1994 Heterojunction internal photoemission Si0.7Ge0.3/Si infrared detector
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Abstract
Single-layer and multilayer Si0.7Ge0.3/Si heterojunction internal photoemission (HIP) detectors with cutoff wavelengths out to ~23 μm have been demonstrated. Near-ideal thermionic emission dark current characteristics and photoresponse at wavelengths up to 20 μm were measured. The cutoff wavelength λc and emission coefficient C1 of the HIP detectors were determined by the modified Fowler plot at the wavelength regime where the corresponding photon energies were smaller than the Fermi energy (~0.15 eV) of the degenerate Si0.7Ge0.3 layers. Similar optical and thermal potential barriers were obtained. The use of multiple Si0.7Ge0.3/Si layers in the stacked HIP detector structure resulted in a significantly increased emission coefficient C1 compared to the single-layer HIP detectors due to an enhanced internal photoemission efficiency without the loss of IR absorption.
True Lon Lin, True Lon Lin, Jin Suk Park, Jin Suk Park, Sarath D. Gunapala, Sarath D. Gunapala, Eric W. Jones, Eric W. Jones, Hector M. Del Castillo, Hector M. Del Castillo, } "Heterojunction internal photoemission Si0.7Ge0.3/Si infrared detector," Optical Engineering 33(3), (1 March 1994). https://doi.org/10.1117/12.163403 . Submission:
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