1 May 1994 Evidence of coherent quantum 1/f noise in long n+ p diffusion current dominated (Hg,Cd)Te photodiodes
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The 1/f fluctuations of dark-current- and photocurrent-induced noise in implanted n+ p Hg0.5Cd0.5Te photodiodes are analyzed within the diffusion-current-dominated bias region at 300 K. The lifetime of the electrons in the p-type region has been determined experimentally. Therefore, the Hooge parameter aH is well defined by the 1/f noise spectrum. The aH value, calculated from dark-current-induced 1/f noise, is in close agreement with the result of Handel's coherent state 1/f-noise theory, which yields aH = 4.6 x 10-3. The 1/f noise of the photoinduced current without applied bias can be described with the same aH value. These results indicate coherent state quantum 1/f noise generated by dark current as well as photoinduced current as a result of mobility fluctuations. If both independent types of currents are generated in the photodiode, the resulting 1/f noise can be sufficiently described only within the concept of coherent state quantum 1/f noise.
Kyra Moellmann, Kyra Moellmann, Michael Happ, Michael Happ, Klaus H. Herrmann, Klaus H. Herrmann, } "Evidence of coherent quantum 1/f noise in long n+ p diffusion current dominated (Hg,Cd)Te photodiodes," Optical Engineering 33(5), (1 May 1994). https://doi.org/10.1117/12.165799 . Submission:

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