1 May 1994 Molecular beam epitaxy HgCdTe infrared photovoltaic detectors
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Optical Engineering, 33(5), (1994). doi:10.1117/12.165818
Abstract
We present p-on-n heterostructure HgCdTe photovoltaic device data that illustrate the high performance and flexibility in band-gap control of molecular beam epitaxy technology. This flexibility demonstration was performed by growing material for operation in the following cutoff wavelength (λco) ranges of interest: long wavelength IR (LWIR) [λco(77 K) = 9 to 11 μm], mid-long wavelength IR (MLWIR) [λco(77 K) = 6.8 μm], and very long wavelength IR (VLWIR) [λco(40 K)=20 μm]. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion limited down to 80, 50, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the R0A device values were uniform for the three band-gap ranges when operating under diffusionlimited conditions. We confirmed this by fabricating a 64 x 64 LWIR (λco = 10.2 μm) hybrid FPA with detectivity (D*) operability greater than 97% when operating at 77 K. The mean D* value for this device was 1.4 x 1011 cm Hz1/2/W and it was background limited at the tested flux of 2.18 x 1016 photons/cm2 s. This device was tested at higher temperatures of operation without changing background conditions, and it remained background limited up to 100 K.
Jose M. Arias, John G. Pasko, Majid Zandian, Lester J. Kozlowski, Roger E. DeWames, "Molecular beam epitaxy HgCdTe infrared photovoltaic detectors," Optical Engineering 33(5), (1 May 1994). http://dx.doi.org/10.1117/12.165818
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KEYWORDS
Mercury cadmium telluride

Diodes

Long wavelength infrared

Diffusion

Staring arrays

Heterojunctions

Arsenic

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