1 May 1994 Monolithic Schottky-barrier infrared image sensor with 71% fill factor
Author Affiliations +
Optical Engineering, 33(5), (1994). doi:10.1117/12.165816
Abstract
An improved 512 x 512-element PtSi Schottky-barrier IR image sensor (512 x 512 IRCSD) has been developed using the charge sweep device (CSD) readout architecture and 1.2-μm minimum design rules. Finer pattern process technology enhances the advantage of the CSD readout architecture, enlarging the fill factor without sacrificing the saturation signal level. A large fill factor of 71% is achieved in spite of a small pixel size of 26 x 20 μm2. At the Schottky-barrier detector reset voltage of 4 V, the differential temperature response with f/1.2 optics at 300 K and saturation signal level were 3.2 x 104 electrons/K and 2.9 x 106 electrons, respectively. The noise equivalent temperature difference was estimated as 0.033 K with f/1.2 optics at 300 K. The improved 512 x 512 IRCSD was designed to be operated either in the field or frame integration interlace modes for versatility.
Hirofumi Yagi, Naoki Yutani, Junji Nakanishi, Masafumi Kimata, Masahiro Nunoshita, Toshiki Seto, Mikio Kamei, "Monolithic Schottky-barrier infrared image sensor with 71% fill factor," Optical Engineering 33(5), (1 May 1994). http://dx.doi.org/10.1117/12.165816
JOURNAL ARTICLE
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KEYWORDS
Image sensors

Sensors

Infrared sensors

Infrared imaging

Signal detection

Thermography

Charge-coupled devices

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