1 May 1994 Monolithic Schottky-barrier infrared image sensor with 71% fill factor
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An improved 512 x 512-element PtSi Schottky-barrier IR image sensor (512 x 512 IRCSD) has been developed using the charge sweep device (CSD) readout architecture and 1.2-μm minimum design rules. Finer pattern process technology enhances the advantage of the CSD readout architecture, enlarging the fill factor without sacrificing the saturation signal level. A large fill factor of 71% is achieved in spite of a small pixel size of 26 x 20 μm2. At the Schottky-barrier detector reset voltage of 4 V, the differential temperature response with f/1.2 optics at 300 K and saturation signal level were 3.2 x 104 electrons/K and 2.9 x 106 electrons, respectively. The noise equivalent temperature difference was estimated as 0.033 K with f/1.2 optics at 300 K. The improved 512 x 512 IRCSD was designed to be operated either in the field or frame integration interlace modes for versatility.
Hirofumi Yagi, Hirofumi Yagi, Naoki Yutani, Naoki Yutani, Junji Nakanishi, Junji Nakanishi, Masafumi Kimata, Masafumi Kimata, Masahiro Nunoshita, Masahiro Nunoshita, Toshiki Seto, Toshiki Seto, Mikio Kamei, Mikio Kamei, } "Monolithic Schottky-barrier infrared image sensor with 71% fill factor," Optical Engineering 33(5), (1 May 1994). https://doi.org/10.1117/12.165816 . Submission:


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