1 May 1994 New trends in semiconductor infrared detectors
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Optical Engineering, 33(5), (1994). doi:10.1117/12.165821
Abstract
Recent efforts in semiconductor IR detector research have been directed toward improving the performance of single-element devices,large electronically scanned arrays, and higher operating temperature. Another important aim is to make IR detectors cheaper and more convenient to use. New trends in semiconductor IR detector technologies are discussed, including HgCdTe photodiodes, Schottky-barrier photoemissive devices, alternatives to HgCdTe ternary alloys, monolithic lead-chalcogenide photodiodes, GaAs/AlGaAs intersubband quantum well photoconductors, and ways to improve the performance of nearroom-temperature detectors. A comparison of different types of detectors with the present stage of HgCdTe technology achievements is undertaken.
Antoni Rogalski, "New trends in semiconductor infrared detectors," Optical Engineering 33(5), (1 May 1994). http://dx.doi.org/10.1117/12.165821
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KEYWORDS
Mercury cadmium telluride

Sensors

Photodiodes

Infrared detectors

Semiconductors

Infrared sensors

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