1 May 1994 Observation of deep holes using the BEASTLI (backscattered electrons assisting LSI inspection) method
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Optical Engineering, 33(5), (1994). doi:10.1117/12.164613
Abstract
In scanning electron microscopy, we have discovered that the bottom of deep holes can be observed clearly when a high-energy electron beam is irradiated. To utilize this phenomena, we developed an instrument that generates a scanning electron probe of 50 to 200 keV with a TV scan rate that enables us to inspect a maximum of 8-in.-diam wafers. In the past, deep holes were inspected by observing the crosssectional view of a hole after breaking the wafer into small pieces. Using a high-energy electron beam, we can easily inspect such holes without destroying the samples. We named this inspection method BEASTLI (backscattered electrons assisting LSI inspection). This observation does not depend on specimen conditions, such as the aspect ratio of holes and the specimen charging that often occurs in such cases of insulator observation. This instrument enables us to observe inside the structure of semiconductor devices. Irradiation damage on semiconductor devices caused by unintentional irradiation of unspecified areas, such as threshold voltage and subthreshold coefficient deviation of metal-oxide semiconductor (MOS) transistors, can be recovered by means of hydrogen annealing for 30 mm with a temperature of 450°C.
Fumio Mizuno, Satoru Yamada, Akihiro Miura, Hideo Todokoro, "Observation of deep holes using the BEASTLI (backscattered electrons assisting LSI inspection) method," Optical Engineering 33(5), (1 May 1994). http://dx.doi.org/10.1117/12.164613
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KEYWORDS
Electrons

Electron beams

Inspection

Photomicroscopy

Semiconducting wafers

Transistors

Molybdenum

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