1 May 1994 Thermoelectrically cooled arsenic diffused medium-wavelength infrared HgCdTe photodiodes
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Optical Engineering, 33(5), (1994). doi:10.1117/12.165820
Abstract
The performance of thermoelectrically cooled p+ -n medium-wavelength infrared (MWIR) HgCdTe photodiodes is analyzed. The effect of doping profile on the photodiode parameters (R0A product, quantum efficiency) is solved by forward-condition steady-state analysis. Results of calculations are compared with experimental data. The p+ -n homojunctions are formed by arsenic diffusion in HgCdTe epilayers. MWIR photodiodes effectively operate at elevated temperatures around 200 K and exhibit background-limited photodetection (BLIP) performance when monolithic optical immersion is used.
Robert Ciupa, Antoni Rogalski, Jolanta Rutkowska, Jozef Piotrowski, "Thermoelectrically cooled arsenic diffused medium-wavelength infrared HgCdTe photodiodes," Optical Engineering 33(5), (1 May 1994). http://dx.doi.org/10.1117/12.165820
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KEYWORDS
Photodiodes

Mercury cadmium telluride

Mid-IR

Arsenic

Quantum efficiency

Diffusion

Doping

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