1 June 1994 Photodetection enhancement in two-terminal amorphous silicon-based devices: an experimental and computer simulation study
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Abstract
Although amorphous silicon (a-Si:H) is very photosensitive and can be doped n and p type, it does not give effective phototransistors because of the extremely poor diffusion lengths. Hence enhanced photodetection in two-terminal a-Si:H devices is of considerable interest. Using the Analysis of Microelectronic and Photonic Structures (AMPS) computer model, we explore enhanced photodetection possibilities in two-terminal a-Si:H structures and show situations where it can occur. These situations, which we then experimentally verify, are of two types: one can yield quantum efficiencies greater than unity and the other can yield gains of 103. Both of these enhanced photodetection situations occur because of what we term photogating.
Stephen J. Fonash, Jingya Hou, Francisco A. Rubinelli, Murray Bennett, Scott Wiedeman, Liyou Yang, James Newton, "Photodetection enhancement in two-terminal amorphous silicon-based devices: an experimental and computer simulation study," Optical Engineering 33(6), (1 June 1994). https://doi.org/10.1117/12.169735 . Submission:
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