1 September 1994 Optical properties of SiNx deposited by electron cyclotron resonance plasma-enhanced deposition
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Abstract
The properties of thin SiNx films deposited by computer-controlled electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) from a mixture of SiH4 and N2 onto sapphire substrates were investigated by optical transmission spectroscopy in the wavelength range 200 to 2600 nm. The wavelength dependencies of the refractive index n, extinction coefficient k, absorption coefficient α, and the optical bandgap Eg of the films were studied. The optical properties of SiNx, were found to be strongly dependent on the gas flow ratio during deposition. The optical band gap displays a blue shift with increase of nitrogen content in the layer with values ranging from 1.7 to 4.2 eV.
Pavel V. Bulkin, Pavel V. Bulkin, Pieter L. Swart, Pieter L. Swart, Beatrys M. Lacquet, Beatrys M. Lacquet, } "Optical properties of SiNx deposited by electron cyclotron resonance plasma-enhanced deposition," Optical Engineering 33(9), (1 September 1994). https://doi.org/10.1117/12.175695 . Submission:
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