1 July 1995 Chemical beam epitaxy of 1.55-μm separate confinement heterostructure multiple quantum well laser diodes
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Abstract
We report on the realization of InGaAs-InGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron microscopy, electron-beam-induced current, and x-ray diffraction. Threshold current densities as low as 450 Acm2 are obtained on lasers with five strained InGaAs quantum wells, along with internal quantum efficiencies of 90% and optical losses of 5 cm-1.
Jean-Francois Carlin, Jean-Michel Sallese, Marc P. de Fays, Patrick Grunberg, Alok P. Rudra, Jean-Marc Bonard, Marc Ilegems, Jean-Daniel Ganiere, "Chemical beam epitaxy of 1.55-μm separate confinement heterostructure multiple quantum well laser diodes," Optical Engineering 34(7), (1 July 1995). https://doi.org/10.1117/12.204694 . Submission:
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