1 September 1995 Modeling, fabrication, and characterization of 1.43-um InGaAsP/InP separate confinement heterostructure multiple quantum-well lasers
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Optical Engineering, 34(9), (1995). doi:10.1117/12.208085
Abstract
We have fabricated InGaAsP/InP separate confinement heterostructure multiple quantum-well lasers emitting at 1.43 μm, which corresponds to a local absorption maximum of liquid water. We have carried out the modeling of the laser, including the calculation of gain, optical confinement factor, and threshold current. The laser structure was grown by atmospheric-pressure all-organometallic vapor-phase epitaxy. The study of the laser structure growth indicates that tertbutylphosphine partial pressure of 2.0 Torr or larger is necessary for the growth of layers with mirrorlike surface morphology. Photoluminescence measurements show that the optimum purge time between the growth of quaternary quantum-well and barrier layers is from 0.5 to 2.5 s. Lattice-matched 500-μm-long devices with three quantum wells lased at a threshold current density of 1.35 kA/cm2 with external quantum efficiency of about 25% per facet. These results are comparable with the results reported for lattice-matched 1.3- and 1.55-μm devices, and are in agreement with the values obtained with laser modeling.
Mikko Taskinen, Arja Heinamaki, Harri K. Lipsanen, Jukka Tulkki, Turkka O. Tuomi, "Modeling, fabrication, and characterization of 1.43-um InGaAsP/InP separate confinement heterostructure multiple quantum-well lasers," Optical Engineering 34(9), (1 September 1995). https://doi.org/10.1117/12.208085
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