1 January 1996 SLITS simulator: modeling and simulation of e-beam/deep-ultraviolet exposure and silylation
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Abstract
The positive resist image by dry etching (PRIME) process is a high-resolution positive resist system incorporating deep-UV (DUV)/ebeam exposure, silylation (gas/liquid phase), and dry development. A new method to calculate the silylation profile in the PRIME process is presented. New software modules have been added to the 2-D simulator SLITS (simulation of lithography on topographic substrates) to simulate the silylation and dry-developed profiles in the PRIME process. The siIylation and dry-developed profiles for the PRIME process are simulated and compared to experimental results. Simulations were carried out for both e-beam and DUV exposures. Under e-beam exposure, the maximum percentage error between the simulated and experimental results was 13%. Under DUV exposure, the silylation depth at the mask edge can be reduced by increasing the dose thus effectively controlling the resist linewidth.
Declan McDonagh, Declan McDonagh, Khalil I. Arshak, Khalil I. Arshak, Arousian Arshak, Arousian Arshak, Jules Braddell, Jules Braddell, } "SLITS simulator: modeling and simulation of e-beam/deep-ultraviolet exposure and silylation," Optical Engineering 35(1), (1 January 1996). https://doi.org/10.1117/1.600931 . Submission:
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