1 December 1996 Effect of transition metal implantation on the characteristics of In0.52Al0.48As/In0.53Ga0.47As metal-semiconductor-metal detectors
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Abstract
This work studied the effect of transition metal implantation on the dc photoresponsivity and frequency response of both n- and p-type InAlAs/InGaAs metal-semiconductor-metal photodetectors. A thin (500 Å) InAlAs layer was grown on 1 ?m thick InGaAs to raise the Schottky barrier height of the metal–semiconductor interface. Multiple energy Fe and Ti implantation was performed into n- and p-type layers, respectively, to obtain uniform implant concentrations over the entire depth of the InAlAs/InGaAs layers. The Fe implantation caused an increase in photoresponsivity and a decrease in bandwidth, whereas the Ti implantation resulted in a decrease in photoresponsivity and a slight increase in bandwidth compared with the no-implantation case.
Mulpuri V. Rao, Nicolas A. Papanicolaou, Catherine Caneau, "Effect of transition metal implantation on the characteristics of In0.52Al0.48As/In0.53Ga0.47As metal-semiconductor-metal detectors," Optical Engineering 35(12), (1 December 1996). https://doi.org/10.1117/1.601099
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